13651969369
當前位置：首頁 > 產(chǎn)品中心 > 二維材料 > 碲化物晶體 > ZrGeTe4
簡要描述：ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers
更新時間：2024-06-03產(chǎn)品型號： 廠商性質(zhì)：生產(chǎn)廠家訪 問 量：1263詳細介紹
ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
產(chǎn)品咨詢
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號
郵箱：taizhou@sunano.com.cn
電話：021-56830191掃一掃以下二維碼了解更多信息
銷售微信咨詢
網(wǎng)站二維碼
歡迎來到