CVD銅基多層氮化硼薄膜

簡要描述：Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

更新時間：2024-06-03
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二維材料

鈣鈦礦/OLED 異質(zhì)結(jié) MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產(chǎn)品

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六方氮化硼晶體其主要的作用是什么？

詳細介紹

Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Multilayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN