六月婷婷色综合,色欲av一区二区三区夜夜嗨 ,一东京热东京热AAAA片AAA,久久五月婷

咨詢熱線

13651969369

當(dāng)前位置:首頁   >  產(chǎn)品中心  >  二維材料  >  二維材料薄膜  >  基于藍(lán)寶石襯底的三角形單層二硫化鉬

基于藍(lán)寶石襯底的三角形單層二硫化鉬

簡要描述:Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire

  • 更新時(shí)間:2024-06-03
  • 產(chǎn)品型號:
  • 廠商性質(zhì):生產(chǎn)廠家
  • 訪  問  量:693

詳細(xì)介紹

Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced MoS2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer MoS2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.




Sample Properties.

Sample size

1cm x 1cm square shaped

Substrate type

(0001) c-cut sapphire

Coverage

Isolated and Partially Merged Monolayer Triangles

Electrical properties

1.85 eV Direct Bandgap Semiconductor

Crystal structure

Hexagonal Phase

Unit cell parameters

a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°

Production method

Atmospheric Pressure Chemical Vapor Deposition (APCVD)

Characterization methods

Raman, photoluminescence, TEM, EDS

Specifications

1)    Identification. Well-separated MoS2 domains across c-cut sapphire

2)    Physical dimensions. One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3)    Smoothness. Atomically smooth surface with roughness < 0.15 nm.

4)    Uniformity. Highly uniform surface morphology. MoS2 triangles are scattered across sample

5)    Purity. 99.9995% purity as determined by nano-SIMS measurements

6)    Reliability. Repeatable Raman and photoluminescence response

7)    Crystallinity. High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8)    Substrate. c-cut Sapphire but our research and development team can transfer MoS2 triangles onto variety of substrates including PET, quartz, and SiO2/Si without significant compromising of material quality.

9)    Defect profile. MoS2 monolayer triangles do not contain intentional dopants or defects. However, our technical staff can produce            defected MoS2 using α-bombardment technique.



Supporting datasets [for Monolayer MoS2 Triangles on c-cut Sapphire]


Transmission electron images (TEM) acquired from CVD grown MoS2 isolated triangles on c-cut sapphire confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown MoS2 isolated triangles on c-cut sapphire confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown MoS2 isolated triangles on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.



產(chǎn)品咨詢

留言框

  • 產(chǎn)品:

  • 您的單位:

  • 您的姓名:

  • 聯(lián)系電話:

  • 常用郵箱:

  • 省份:

  • 詳細(xì)地址:

  • 補(bǔ)充說明:

  • 驗(yàn)證碼:

    請輸入計(jì)算結(jié)果(填寫阿拉伯?dāng)?shù)字),如:三加四=7
泰州巨納新能源有限公司
  • 聯(lián)系人:陳谷一
  • 地址:江蘇省泰州市鳳凰西路168號
  • 郵箱:taizhou@sunano.com.cn
  • 電話:021-56830191
聯(lián)系我們

掃一掃以下二維碼了解更多信息

銷售微信咨詢

網(wǎng)站二維碼

版權(quán)所有©2024泰州巨納新能源有限公司All Rights Reserved    備案號:蘇ICP備17000059號-2    sitemap.xml    總訪問量:61468
管理登陸    技術(shù)支持:化工儀器網(wǎng)